A Variational Formulation for Modeling a Phosphorus Doped Silicon Semiconductor Through a Multi‐Well Approach
Fabio Silva Botelho
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Theory and Simulations
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/adts.202501365
The original publisher provides the full text and its access options.
Cite this source
Fabio Silva Botelho. A Variational Formulation for Modeling a Phosphorus Doped Silicon Semiconductor Through a Multi‐Well Approach. Advanced Theory and Simulations. 2025-11-11. https://doi.org/10.1002/adts.202501365