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Evaluation of Transient Characteristics on Steep Subthreshold Slope “Gate-Controlled Carrier-Injection SOI-Transistor”

Haruki Yonezaki; Takayuki Mori; Jiro Ida

Published
Publisher
The Japan Society of Applied Physics
Journal / collection
Extended Abstracts of the 2025 International Conference on Solid State Devices and Materials
Research area
Semiconductors
Source type
Conference paper
DOI
10.7567/ssdm.2025.a-4-05

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Haruki Yonezaki; Takayuki Mori; Jiro Ida. Evaluation of Transient Characteristics on Steep Subthreshold Slope “Gate-Controlled Carrier-Injection SOI-Transistor”. Extended Abstracts of the 2025 International Conference on Solid State Devices and Materials. 2025-09-17. https://doi.org/10.7567/ssdm.2025.a-4-05

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