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A Comprehensive Study on Device and Circuit Level Performance of Vertically Stacked Doping-Less Nanosheet Field Effect Transistor

Peravali Rahul; Srinivasa Rao Karumuri; A. Srisaila; A. Narendra Babu; N. Janardhan; V. Vijaya Sri Bolisetty; Rudra Lakshmi Prasanna; Ravi Sankar Puppala; Girija Sravani Kondavitee

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal / collection
IEEE Access
Research area
Semiconductors
Source type
Journal article
DOI
10.1109/access.2026.3671444

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Peravali Rahul; Srinivasa Rao Karumuri; A. Srisaila; A. Narendra Babu; N. Janardhan; V. Vijaya Sri Bolisetty; Rudra Lakshmi Prasanna; Ravi Sankar Puppala; Girija Sravani Kondavitee. A Comprehensive Study on Device and Circuit Level Performance of Vertically Stacked Doping-Less Nanosheet Field Effect Transistor. IEEE Access. 2026. https://doi.org/10.1109/access.2026.3671444

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