Finite Element Analysis of the Asymmetric Warpage Induced by the Oxidation Process in Trench Insulated Gate Bipolar Transistor (Trench IGBT) 12” Si Patterned Wafers
Vincenzo Vinciguerra; Filippo Sabatini; Mohamed Boutaleb; Giuseppe Luigi Malgioglio; Simone Dario Mariani; Fabrice Roqueta; Davide Fagiani; Marco Renna; Paola Zuliani; Andrea Li Bassi
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/eurosime65125.2025.11006629
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Vincenzo Vinciguerra; Filippo Sabatini; Mohamed Boutaleb; Giuseppe Luigi Malgioglio; Simone Dario Mariani; Fabrice Roqueta; Davide Fagiani; Marco Renna; Paola Zuliani; Andrea Li Bassi. Finite Element Analysis of the Asymmetric Warpage Induced by the Oxidation Process in Trench Insulated Gate Bipolar Transistor (Trench IGBT) 12” Si Patterned Wafers. 2025 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). 2025-04-06. https://doi.org/10.1109/eurosime65125.2025.11006629