Investigation of Single-Event Burnout in Laterally-Diffused Metal-Oxide Semiconductor for Power Modulation Circuits
Feng Yang; Yihan Liu; Chao Wang; Yang Zhao; Yongfu Li
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Device and Materials Reliability
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tdmr.2025.3618260
The original publisher provides the full text and its access options.
Cite this source
Feng Yang; Yihan Liu; Chao Wang; Yang Zhao; Yongfu Li. Investigation of Single-Event Burnout in Laterally-Diffused Metal-Oxide Semiconductor for Power Modulation Circuits. IEEE Transactions on Device and Materials Reliability. 2025-12. https://doi.org/10.1109/tdmr.2025.3618260