Selective etching behavior of SiGe via controlled N(III) species with formation of NOCl for the integration of Gate-All-Around transistor
Kiwon Song; Sangwoo Lim
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Surfaces and Interfaces
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.surfin.2026.108960
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Cite this source
Kiwon Song; Sangwoo Lim. Selective etching behavior of SiGe via controlled N(III) species with formation of NOCl for the integration of Gate-All-Around transistor. Surfaces and Interfaces. 2026-04. https://doi.org/10.1016/j.surfin.2026.108960