Boosting the On/Off Current Ratio of MOS Transistor Over a Wide High-Temperature Range Using Second-Generation Layout Style for MOSFETs
Egon Henrique Salerno Galembeck; Denis Flandre; Cor Claeys; Salvador Pinillos Gimenez
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2026.3731597
The original publisher provides the full text and its access options.
Cite this source
Egon Henrique Salerno Galembeck; Denis Flandre; Cor Claeys; Salvador Pinillos Gimenez. Boosting the On/Off Current Ratio of MOS Transistor Over a Wide High-Temperature Range Using Second-Generation Layout Style for MOSFETs. IEEE Transactions on Electron Devices. 2026. https://doi.org/10.1109/ted.2026.3731597