Interface traps build-up and its influence on electrostatic discharge robustness of high-power metal-oxide-semiconductor field-effect transistor
D. M. Bakerenkova; A. S. Petrov
- Published
- Publisher
- RTU MIREA
- Journal / collection
- Russian Technological Journal
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.32362/2500-316x-2025-13-6-86-94
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Cite this source
D. M. Bakerenkova; A. S. Petrov. Interface traps build-up and its influence on electrostatic discharge robustness of high-power metal-oxide-semiconductor field-effect transistor. Russian Technological Journal. 2025-12-05. https://doi.org/10.32362/2500-316x-2025-13-6-86-94