Normally-off Al/HfO2/Al-gated diamond field effect transistor on a heteroepitaxial diamond substrate
Yoonseok Nam; Taemyung Kwak; Hyunsu Ma; Seolyoung Oh; Sangwook Park; Min Yoon; Donghyeon Kyung; Geunho Yoo; Seong-Woo Kim; Okhyun Nam
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Diamond and Related Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.diamond.2025.113258
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Cite this source
Yoonseok Nam; Taemyung Kwak; Hyunsu Ma; Seolyoung Oh; Sangwook Park; Min Yoon; Donghyeon Kyung; Geunho Yoo; Seong-Woo Kim; Okhyun Nam. Normally-off Al/HfO2/Al-gated diamond field effect transistor on a heteroepitaxial diamond substrate. Diamond and Related Materials. 2026-02. https://doi.org/10.1016/j.diamond.2025.113258