Study the Performance of Silicon-On-Insulator Based Junction Less Transistor Using MOS and FGMOS 6t-Sram Cells
Department of Electrical/Electronic Engineering Technology, Federal Polytechnic Kaltungo, Nigeria.; Bubakari Joda; Mohammed A. Sule; Department of Computer Engineering Technology, Federal Polytechnic Kaltungo, Nigeria.; Bashir I. Njodi; Department of Computer Engineering Technology, Federal Polytechnic Kaltungo, Nigeria; Abbas Adamu; Department of Electrical/Electronic Engineering Tech. Federal Polytechnic N’yakShendam, Nigeria; Denis D. Jonathan; Department of Computer Engineering Technology, Federal Polytechnic Kaltungo, Nigeria.
- Published
- Publisher
- Everant Journals
- Journal / collection
- Engineering and Technology Journal
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.47191/etj/v10i07.17
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Cite this source
Department of Electrical/Electronic Engineering Technology, Federal Polytechnic Kaltungo, Nigeria.; Bubakari Joda; Mohammed A. Sule; Department of Computer Engineering Technology, Federal Polytechnic Kaltungo, Nigeria.; Bashir I. Njodi; Department of Computer Engineering Technology, Federal Polytechnic Kaltungo, Nigeria; Abbas Adamu; Department of Electrical/Electronic Engineering Tech. Federal Polytechnic N’yakShendam, Nigeria; Denis D. Jonathan; Department of Computer Engineering Technology, Federal Polytechnic Kaltungo, Nigeria.. Study the Performance of Silicon-On-Insulator Based Junction Less Transistor Using MOS and FGMOS 6t-Sram Cells. Engineering and Technology Journal. 2025-07-23. https://doi.org/10.47191/etj/v10i07.17