Enhanced high electron mobility transistor featuring a lattice matched AlInGaN/GaN heterojunction and composite gate structure
Kai Niu; Hao-Xiang Lin; Li-E. Cai; Zhi-Chao Chen; Zhi-Yu Ma; Yi-Fei Chen; Xiang-Yu Liu; Chuan-Tao Sun; Hai-Feng Lin; Zai-Jun Cheng
- Published
- Publisher
- AIP Publishing
- Journal / collection
- AIP Advances
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0253119
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Cite this source
Kai Niu; Hao-Xiang Lin; Li-E. Cai; Zhi-Chao Chen; Zhi-Yu Ma; Yi-Fei Chen; Xiang-Yu Liu; Chuan-Tao Sun; Hai-Feng Lin; Zai-Jun Cheng. Enhanced high electron mobility transistor featuring a lattice matched AlInGaN/GaN heterojunction and composite gate structure. AIP Advances. 2025-03-01. https://doi.org/10.1063/5.0253119