Analytical model and experimental validation of critical dependency of pGaN gated AlGaN/GaN enhancement-mode high electron mobility transistor characteristics on trap-assisted tunneling
Ranie S. Jeyakumar; J. J. James; Swaroop Ganguly; Dipankar Saha
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0231721
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Cite this source
Ranie S. Jeyakumar; J. J. James; Swaroop Ganguly; Dipankar Saha. Analytical model and experimental validation of critical dependency of pGaN gated AlGaN/GaN enhancement-mode high electron mobility transistor characteristics on trap-assisted tunneling. Journal of Applied Physics. 2024-10-17. https://doi.org/10.1063/5.0231721