IGZO Channel VCT(Vertical Channel Transistor) Technology for sub-10nm DRAM: Challenges and Opportunites
Yongjin Lee; Daewon Ha; W. Lee; S. Yoo; J.H. Bae; M.H. Cho; K. Yoo; S.M. Lee; S. Lee; M. Terai; T.H. Lee; K.J. Moon; C. Sung; M. Hong; D.G. Cho; H. Kim; J. H. Seo; K. Park; B.J. Kuh; S. Hyun
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE Silicon Nanoelectronics Workshop (SNW)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/snw63608.2024.10639202
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Cite this source
Yongjin Lee; Daewon Ha; W. Lee; S. Yoo; J.H. Bae; M.H. Cho; K. Yoo; S.M. Lee; S. Lee; M. Terai; T.H. Lee; K.J. Moon; C. Sung; M. Hong; D.G. Cho; H. Kim; J. H. Seo; K. Park; B.J. Kuh; S. Hyun. IGZO Channel VCT(Vertical Channel Transistor) Technology for sub-10nm DRAM: Challenges and Opportunites. 2024 IEEE Silicon Nanoelectronics Workshop (SNW). 2024-06-15. https://doi.org/10.1109/snw63608.2024.10639202