Field-Effect Transistor Based on MoSi₂N₄ Monolayer for Digital Logic Applications
Hamidreza Ghanbari Khorram; Samad Sheikhaei; Shoeib Babaee Touski; Alireza Kokabi
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3454214
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Cite this source
Hamidreza Ghanbari Khorram; Samad Sheikhaei; Shoeib Babaee Touski; Alireza Kokabi. Field-Effect Transistor Based on MoSi₂N₄ Monolayer for Digital Logic Applications. IEEE Transactions on Electron Devices. 2024-11. https://doi.org/10.1109/ted.2024.3454214