Effect of Yttrium Treatment on Germanium-Oxide-Based Interfacial Layer of Ge P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated Through in Situ Plasma-Enhanced Atomic Layer Deposition
Hui-Hsuan Li; Kuan-Yu Lin; Yi-He Tsai; Yu-Hsien Lin; Chao-Hsin Chien
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3349998
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Cite this source
Hui-Hsuan Li; Kuan-Yu Lin; Yi-He Tsai; Yu-Hsien Lin; Chao-Hsin Chien. Effect of Yttrium Treatment on Germanium-Oxide-Based Interfacial Layer of Ge P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated Through in Situ Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices. 2024-03. https://doi.org/10.1109/ted.2024.3349998