Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode
Xintong Xie; Shuxiang Sun; Zhijia Zhao; Pengfei Zhang; Jie Wei; Xin Zhou; Jingyu Shen; Jinpeng Qiu; Xiaorong Luo
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Microelectronics Journal
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mejo.2024.106091
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Cite this source
Xintong Xie; Shuxiang Sun; Zhijia Zhao; Pengfei Zhang; Jie Wei; Xin Zhou; Jingyu Shen; Jinpeng Qiu; Xiaorong Luo. Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. Microelectronics Journal. 2024-02. https://doi.org/10.1016/j.mejo.2024.106091