Low R on C rss Nomally-off Vertical GaN Transistor on GaN Substrate Using p-GaN Shield Structure for High-Power and High-Speed Switching
Naoki Torii; Daisuke Shibata; Masahiro Ogawa; Masao Kawaguchi; Hiroyuki Handa; Naohiro Tsurumi; Satoshi Tamura; Yoshio Okayama
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Electron Devices Meeting (IEDM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iedm50854.2024.10873538
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Cite this source
Naoki Torii; Daisuke Shibata; Masahiro Ogawa; Masao Kawaguchi; Hiroyuki Handa; Naohiro Tsurumi; Satoshi Tamura; Yoshio Okayama. Low R on C rss Nomally-off Vertical GaN Transistor on GaN Substrate Using p-GaN Shield Structure for High-Power and High-Speed Switching. 2024 IEEE International Electron Devices Meeting (IEDM). 2024-12-07. https://doi.org/10.1109/iedm50854.2024.10873538