Indium-Tin-Oxide Transistor with Maximum Transconductance Over $1100 \mu \mathrm{S} / \mu \mathrm{m}$ and Cut-Off Frequency of 23 GHz
Yuxuan Wang; Jiawei Xie; Zijie Zheng; Yuye Kang; Xuanqi Chen; Gerui Zheng; Rui Shao; Kaizhen Han; Xiao Gong
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/edtm61175.2025.11040865
The original publisher provides the full text and its access options.
Cite this source
Yuxuan Wang; Jiawei Xie; Zijie Zheng; Yuye Kang; Xuanqi Chen; Gerui Zheng; Rui Shao; Kaizhen Han; Xiao Gong. Indium-Tin-Oxide Transistor with Maximum Transconductance Over $1100 \mu \mathrm{S} / \mu \mathrm{m}$ and Cut-Off Frequency of 23 GHz. 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2025-03-09. https://doi.org/10.1109/edtm61175.2025.11040865