First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material
Abdullahi Alkali Dauda; Muhammad Yusuf Onimisi; Adeyemi Joshua Owolabi; Hammed Adeneyi Lawal; Hassan Muhammad Gambo; Bashir Mohammed Aliyu; Surajo Bala; Muhammad Lamido Madugu; Muhammad Abdurrahman Nainna; Johnson Akinade Bamikole
- Published
- Publisher
- Scientific Research Publishing, Inc.
- Journal / collection
- World Journal of Condensed Matter Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.4236/wjcmp.2024.142004
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Cite this source
Abdullahi Alkali Dauda; Muhammad Yusuf Onimisi; Adeyemi Joshua Owolabi; Hammed Adeneyi Lawal; Hassan Muhammad Gambo; Bashir Mohammed Aliyu; Surajo Bala; Muhammad Lamido Madugu; Muhammad Abdurrahman Nainna; Johnson Akinade Bamikole. First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material. World Journal of Condensed Matter Physics. 2024. https://doi.org/10.4236/wjcmp.2024.142004