Control of Interfacial Defect States in the Flexible InGaZnO Thin Film Transistor with a 6FDA-MDA Gate Insulator by Using an Al 2 O 3 Interlayer
Min Jung Kim; Hyunjin Park; Hyunmin Hong; Sungmi Yoo; Kwangsik Jeong; Yun Ho Kim; Kwun-Bum Chung
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.3c01554
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Cite this source
Min Jung Kim; Hyunjin Park; Hyunmin Hong; Sungmi Yoo; Kwangsik Jeong; Yun Ho Kim; Kwun-Bum Chung. Control of Interfacial Defect States in the Flexible InGaZnO Thin Film Transistor with a 6FDA-MDA Gate Insulator by Using an Al 2 O 3 Interlayer. ACS Applied Electronic Materials. 2024-02-05. https://doi.org/10.1021/acsaelm.3c01554