Mitigating WL-to-WL Disturbance in Dynamic Random-Access Memory (DRAM) through Adopted Spherical Shallow Trench Isolation with Silicon Nitride Layer in the Buried Channel Array Transistor (BCAT)
Yeon-Seok Kim; Chang-Young Lim; Min-Woo Kwon
- Published
- Publisher
- MDPI AG
- Journal / collection
- Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/electronics13040681
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Cite this source
Yeon-Seok Kim; Chang-Young Lim; Min-Woo Kwon. Mitigating WL-to-WL Disturbance in Dynamic Random-Access Memory (DRAM) through Adopted Spherical Shallow Trench Isolation with Silicon Nitride Layer in the Buried Channel Array Transistor (BCAT). Electronics. 2024-02-07. https://doi.org/10.3390/electronics13040681