Double-Sided Cooling Half-Bridge Power Module of 650V/150A Gallium Nitride High-Electron-Mobility Transistor
Shengchang Lu; Bo Li; Emmanuel Arriola; Zichen Zhang; Carl Nicholas; Khai D. T. Ngo; Guo-Quan Lu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Industrial Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tie.2024.3383021
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Cite this source
Shengchang Lu; Bo Li; Emmanuel Arriola; Zichen Zhang; Carl Nicholas; Khai D. T. Ngo; Guo-Quan Lu. Double-Sided Cooling Half-Bridge Power Module of 650V/150A Gallium Nitride High-Electron-Mobility Transistor. IEEE Transactions on Industrial Electronics. 2024-12. https://doi.org/10.1109/tie.2024.3383021