High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N 2 O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device
Jiwon Sun; Jinbaek Bae; Taebin Lim; Myeonggi Jeong; Sabiqun Nahar; Yuna Kim; Jin Jang
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202400857
The original publisher provides the full text and its access options.
Cite this source
Jiwon Sun; Jinbaek Bae; Taebin Lim; Myeonggi Jeong; Sabiqun Nahar; Yuna Kim; Jin Jang. High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N 2 O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device. physica status solidi (a). 2025-02-11. https://doi.org/10.1002/pssa.202400857