Self-Heating Effect in a MoS 2 Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer
Weiqi Dang; Ying Huangfu; Mongur Hossain; Xiaohui Lin; Zheyi Lu; Ziwei Huang; Zhiwei Li; Yuan Liu; Xidong Duan
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.3c01469
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Cite this source
Weiqi Dang; Ying Huangfu; Mongur Hossain; Xiaohui Lin; Zheyi Lu; Ziwei Huang; Zhiwei Li; Yuan Liu; Xidong Duan. Self-Heating Effect in a MoS 2 Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer. ACS Applied Electronic Materials. 2024-01-04. https://doi.org/10.1021/acsaelm.3c01469