Analytical modeling of recessed double gate junctionless field‐effect‐transistor in subthreshold region
Sandeep Kumar; Arun Kumar Chatterjee; Rishikesh Pandey
- Published
- Publisher
- Wiley
- Journal / collection
- International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/jnm.3209
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Cite this source
Sandeep Kumar; Arun Kumar Chatterjee; Rishikesh Pandey. Analytical modeling of recessed double gate junctionless field‐effect‐transistor in subthreshold region. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 2024-01-18. https://doi.org/10.1002/jnm.3209