Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF Transistor featuring 2.2W/mm P sat & 41% PAE @28GHz using a Robust and Cost-Effective Chiplet Heterogeneous Bonding Technique
A. Divay; O. Valorge; C. Dubarry; M. Medbouhi; R. Franiatte; D. Mermin; R. Velard; Y. Gobil; F. Morisot; E. Morvan; I. Charlet; L. Lucci; J. Lugo; X. Garros
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/vlsitechnologyandcir46783.2024.10631451
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Cite this source
A. Divay; O. Valorge; C. Dubarry; M. Medbouhi; R. Franiatte; D. Mermin; R. Velard; Y. Gobil; F. Morisot; E. Morvan; I. Charlet; L. Lucci; J. Lugo; X. Garros. Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF Transistor featuring 2.2W/mm P sat & 41% PAE @28GHz using a Robust and Cost-Effective Chiplet Heterogeneous Bonding Technique. 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2024-06-16. https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631451