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Gate all around carbon nanotube field effect transistor espoused discrepancy cascode pass transistor adiabatic logic for ultra-low power application

B. Jyothi; B.V. Ramana Reddy; Mansi Jhamb

Published
Publisher
Elsevier BV
Journal / collection
Integration
Research area
Semiconductors
Source type
Journal article
DOI
10.1016/j.vlsi.2024.102260

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B. Jyothi; B.V. Ramana Reddy; Mansi Jhamb. Gate all around carbon nanotube field effect transistor espoused discrepancy cascode pass transistor adiabatic logic for ultra-low power application. Integration. 2025-01. https://doi.org/10.1016/j.vlsi.2024.102260

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