28 nm FD-SOI 4 K RF LNA Design Using DC Transistor Characterization Measurements
Giovani Britton; Salvador Mir; Estelle Lauga-Larroze; Benjamin Dormieu; Jose Lugo; Joao Azevedo; Sebastien Sadlo; Quentin Berlingard; Mickael Casse; Philippe Galy
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 IEEE 26th Latin American Test Symposium (LATS)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/lats65346.2025.10963946
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Cite this source
Giovani Britton; Salvador Mir; Estelle Lauga-Larroze; Benjamin Dormieu; Jose Lugo; Joao Azevedo; Sebastien Sadlo; Quentin Berlingard; Mickael Casse; Philippe Galy. 28 nm FD-SOI 4 K RF LNA Design Using DC Transistor Characterization Measurements. 2025 IEEE 26th Latin American Test Symposium (LATS). 2025-03-11. https://doi.org/10.1109/lats65346.2025.10963946