Horizontally aligned ALD-SnO films grown on SiO2-passivated high-k HfO2 dielectrics for high-mobility and low-power P-channel thin-film transistor
Jina Kim; Hee Won Jang; Myeong Gil Chae; Heenang Choi; Jeong Eun Shin; Bo Keun Park; Taek-Mo Chung; Jeong Hwan Han
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Surfaces and Interfaces
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.surfin.2023.103726
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Cite this source
Jina Kim; Hee Won Jang; Myeong Gil Chae; Heenang Choi; Jeong Eun Shin; Bo Keun Park; Taek-Mo Chung; Jeong Hwan Han. Horizontally aligned ALD-SnO films grown on SiO2-passivated high-k HfO2 dielectrics for high-mobility and low-power P-channel thin-film transistor. Surfaces and Interfaces. 2024-01. https://doi.org/10.1016/j.surfin.2023.103726