Enhancement-Mode Ionic Transistor Architecture with an Entirely Ionic Gating Mechanism
Fatemeh Hassanpour; McKayla Kling; Hailey Negley; Nicole N. Hashemi; Reza Montazami
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.5c00125
The original publisher provides the full text and its access options.
Cite this source
Fatemeh Hassanpour; McKayla Kling; Hailey Negley; Nicole N. Hashemi; Reza Montazami. Enhancement-Mode Ionic Transistor Architecture with an Entirely Ionic Gating Mechanism. ACS Applied Electronic Materials. 2025-03-28. https://doi.org/10.1021/acsaelm.5c00125