Accurate Analytical Modeling of Drain Current of Heterojunction Tunneling Field Effect Transistor
F. Peyravi; S. E. Hosseini
- Published
- Publisher
- International Digital Organization for Scientific Information (IDOSI)
- Journal / collection
- International Journal of Engineering
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.5829/ije.2024.37.07a.12
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Cite this source
F. Peyravi; S. E. Hosseini. Accurate Analytical Modeling of Drain Current of Heterojunction Tunneling Field Effect Transistor. International Journal of Engineering. 2024. https://doi.org/10.5829/ije.2024.37.07a.12