Radiation Evaluation of the TPS7H6003-SP Radiation-Hardness-Assured (RHA) Gallium Nitride (GaN) Field Effect Transistor (FET) Gate Driver
T. Lew; E. Johnson; A. Marinelarena; J. Nuttall
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2024 NSREC)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/redw61286.2024.10759206
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Cite this source
T. Lew; E. Johnson; A. Marinelarena; J. Nuttall. Radiation Evaluation of the TPS7H6003-SP Radiation-Hardness-Assured (RHA) Gallium Nitride (GaN) Field Effect Transistor (FET) Gate Driver. 2024 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2024 NSREC). 2024-07-22. https://doi.org/10.1109/redw61286.2024.10759206