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Research literature / Conference paper

Electron Mobility Calculations and Scattering Effects in GaN Compound Semiconductor

Nesrin A. Elshtwy; Fawzi A. Ikraiam

Published
Publisher
IEEE
Journal / collection
2024 IEEE 4th International Maghreb Meeting of the Conference on Sciences and Techniques of Automatic Control and Computer Engineering (MI-STA)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/mi-sta61267.2024.10599727

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Nesrin A. Elshtwy; Fawzi A. Ikraiam. Electron Mobility Calculations and Scattering Effects in GaN Compound Semiconductor. 2024 IEEE 4th International Maghreb Meeting of the Conference on Sciences and Techniques of Automatic Control and Computer Engineering (MI-STA). 2024-05-19. https://doi.org/10.1109/mi-sta61267.2024.10599727

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