A proposal and simulation analysis for a novel architecture of gate-all-around polycrystalline silicon nanowire field effect transistor
Asseya El-amiri; Fouad Demami
- Published
- Publisher
- Institute of Advanced Engineering and Science
- Journal / collection
- International Journal of Electrical and Computer Engineering (IJECE)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.11591/ijece.v14i2.pp1390-1397
The original publisher provides the full text and its access options.
Cite this source
Asseya El-amiri; Fouad Demami. A proposal and simulation analysis for a novel architecture of gate-all-around polycrystalline silicon nanowire field effect transistor. International Journal of Electrical and Computer Engineering (IJECE). 2024-04-01. https://doi.org/10.11591/ijece.v14i2.pp1390-1397