Temperature characterization of 660 nm quantum well semiconductor laser
Rehab Joko Hussin; Ivan Bahnam Karomi
- Published
- Publisher
- AIP Publishing
- Journal / collection
- AIP Conference Proceedings
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1063/5.0196162
The original publisher provides the full text and its access options.
Cite this source
Rehab Joko Hussin; Ivan Bahnam Karomi. Temperature characterization of 660 nm quantum well semiconductor laser. AIP Conference Proceedings. 2024. https://doi.org/10.1063/5.0196162