Solution-processed Tb: Zr co-doped In2O3 thin film transistor and its dual effect on improving photostability
Zeneng Deng; Zhihao Liang; Honglong Ning; Yuexin Yang; Xiao Fu; Muyun Li; Shaojie Jin; Bocheng Jiang; Rihui Yao; Junbiao Peng
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Journal of Alloys and Compounds
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.jallcom.2024.176778
The original publisher provides the full text and its access options.
Cite this source
Zeneng Deng; Zhihao Liang; Honglong Ning; Yuexin Yang; Xiao Fu; Muyun Li; Shaojie Jin; Bocheng Jiang; Rihui Yao; Junbiao Peng. Solution-processed Tb: Zr co-doped In2O3 thin film transistor and its dual effect on improving photostability. Journal of Alloys and Compounds. 2024-12. https://doi.org/10.1016/j.jallcom.2024.176778