One Ferroelectric Field-Effect Transistor and One Capacitor Ternary Content-Addressable Memory Based on Charge Domain Sensing Mechanism
Jiahui Duan; Zijian Zhao; Kai Ni
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Conference on IC Design and Technology (ICICDT)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/icicdt63592.2024.10717858
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Cite this source
Jiahui Duan; Zijian Zhao; Kai Ni. One Ferroelectric Field-Effect Transistor and One Capacitor Ternary Content-Addressable Memory Based on Charge Domain Sensing Mechanism. 2024 IEEE International Conference on IC Design and Technology (ICICDT). 2024-09-25. https://doi.org/10.1109/icicdt63592.2024.10717858