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Ferroelectric FET-based In-memory 1 Transistor XOR and Majority gate for Compact and Energy Efficient Hyperdimensional Computing Accelerator

Arka Chakraborty; Franz Müller; Thomas Kämpfe; Shubham Sahay

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Research area
Semiconductors
Source type
Preprint / posted paper
DOI
10.36227/techrxiv.172107745.51463287/v1

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Arka Chakraborty; Franz Müller; Thomas Kämpfe; Shubham Sahay. Ferroelectric FET-based In-memory 1 Transistor XOR and Majority gate for Compact and Energy Efficient Hyperdimensional Computing Accelerator. Institute of Electrical and Electronics Engineers (IEEE). 2024-07-15. https://doi.org/10.36227/techrxiv.172107745.51463287/v1

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