Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor
Abdelmalek Douara; Abdelaziz Rabehi; Mawloud Guermoui; Rania Daha; Imad Eddine Tibermacine
- Published
- Publisher
- Pleiades Publishing Ltd
- Journal / collection
- Physics of the Solid State
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1134/s1063783424600766
The original publisher provides the full text and its access options.
Cite this source
Abdelmalek Douara; Abdelaziz Rabehi; Mawloud Guermoui; Rania Daha; Imad Eddine Tibermacine. Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor. Physics of the Solid State. 2024-06. https://doi.org/10.1134/s1063783424600766