Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning
Wenkui Zhang; Jun Li; Mengjiao Li; Yi Li; Hong Lian; Wenqing Gao; Benxiao Sun; Fei Wang; Lian Cheng; Hanqi Yu; Lianghao Chen; Jianhua Zhang
- Published
- Publisher
- Wiley
- Journal / collection
- Small Science
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/smsc.202300306
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Cite this source
Wenkui Zhang; Jun Li; Mengjiao Li; Yi Li; Hong Lian; Wenqing Gao; Benxiao Sun; Fei Wang; Lian Cheng; Hanqi Yu; Lianghao Chen; Jianhua Zhang. Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning. Small Science. 2024-03-03. https://doi.org/10.1002/smsc.202300306