Schottky-MIS Cascode Drain Reverse-Blocking p-GaN Gate Transistor With Significantly Reduced Forward Drop and Ultralow Leakage Current
Fangzhou Wang; Changhong Gao; Guojian Ding; Cheng Yu; Xiaoliang Wang; Zhuocheng Wang; Xiaohui Wang; Qi Feng; Ping Yu; Xinghuan Chen; Yang Wang; Wanjun Chen; Haiqiang Jia; Hong Chen; Bo Zhang; Zeheng Wang
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2024.3515211
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Fangzhou Wang; Changhong Gao; Guojian Ding; Cheng Yu; Xiaoliang Wang; Zhuocheng Wang; Xiaohui Wang; Qi Feng; Ping Yu; Xinghuan Chen; Yang Wang; Wanjun Chen; Haiqiang Jia; Hong Chen; Bo Zhang; Zeheng Wang. Schottky-MIS Cascode Drain Reverse-Blocking p-GaN Gate Transistor With Significantly Reduced Forward Drop and Ultralow Leakage Current. IEEE Electron Device Letters. 2025-02. https://doi.org/10.1109/led.2024.3515211