High-throughput and performance InZnAlO thin film transistor on polyimide substrate via atmospheric pressure spatial atomic layer deposition
Daejung Kim; Kwang Su Yoo; Chi-Hoon Lee; Ji-Min Kim; Dong-Gyu Kim; Hyeon-Woo Lee; Hyuck-In Kwon; Jin-Seong Park
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Journal of Alloys and Compounds
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.jallcom.2025.180031
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Cite this source
Daejung Kim; Kwang Su Yoo; Chi-Hoon Lee; Ji-Min Kim; Dong-Gyu Kim; Hyeon-Woo Lee; Hyuck-In Kwon; Jin-Seong Park. High-throughput and performance InZnAlO thin film transistor on polyimide substrate via atmospheric pressure spatial atomic layer deposition. Journal of Alloys and Compounds. 2025-04. https://doi.org/10.1016/j.jallcom.2025.180031