Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

A Novel High-Speed Split-Gate Trench Carrier-Stored Trench-Gate Bipolar Transistor with Enhanced Short-Circuit Roughness

Zhehong Qian; Wenrong Cui; Tianyang Feng; Hang Xu; Yafen Yang; Qingqing Sun; David Wei Zhang

Published
Publisher
MDPI AG
Journal / collection
Micromachines
Research area
Semiconductors
Source type
Journal article
DOI
10.3390/mi15060680

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Zhehong Qian; Wenrong Cui; Tianyang Feng; Hang Xu; Yafen Yang; Qingqing Sun; David Wei Zhang. A Novel High-Speed Split-Gate Trench Carrier-Stored Trench-Gate Bipolar Transistor with Enhanced Short-Circuit Roughness. Micromachines. 2024-05-22. https://doi.org/10.3390/mi15060680

Download RIS