Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor
D. Lidsky; C. R. Allemang; T. Hutchins-Delgado; A. R. James; P. Allen; M. Saleh Ziabari; P. Sharma; A. M. Bradicich; W. C.-H. Kuo; S. D. House; T. M. Lu
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0199583
The original publisher provides the full text and its access options.
Cite this source
D. Lidsky; C. R. Allemang; T. Hutchins-Delgado; A. R. James; P. Allen; M. Saleh Ziabari; P. Sharma; A. M. Bradicich; W. C.-H. Kuo; S. D. House; T. M. Lu. Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor. Applied Physics Letters. 2024-06-03. https://doi.org/10.1063/5.0199583