Gate Layout and Process Reliability Co‐Optimization in High‐Speed Vertical III–V Nanowire Metal‐Oxide‐Semiconductor Field‐Effect Transistor Technology
Marcus E. Sandberg; Anette Löfstrand; Johannes Svensson; Lars Fhager
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202400690
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Cite this source
Marcus E. Sandberg; Anette Löfstrand; Johannes Svensson; Lars Fhager. Gate Layout and Process Reliability Co‐Optimization in High‐Speed Vertical III–V Nanowire Metal‐Oxide‐Semiconductor Field‐Effect Transistor Technology. physica status solidi (a). 2025-02-18. https://doi.org/10.1002/pssa.202400690