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Research literature / Journal article

Enhanced Performance of Dual Material Double Gate Negative Capacitance Tunnel Field Effect Transistor ( DMDG ‐ NC ‐ TFET ) via HZO Ferroelectric Integration for Improved Drain Current and Subthreshold Swing

P. Hannah Blessy; A. Shenbagavalli; T. S. Arun Samuel; J. Charles Pravin

Published
Publisher
Wiley
Journal / collection
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Research area
Semiconductors
Source type
Journal article
DOI
10.1002/jnm.70001

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P. Hannah Blessy; A. Shenbagavalli; T. S. Arun Samuel; J. Charles Pravin. Enhanced Performance of Dual Material Double Gate Negative Capacitance Tunnel Field Effect Transistor ( DMDG ‐ NC ‐ TFET ) via HZO Ferroelectric Integration for Improved Drain Current and Subthreshold Swing. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 2024-11. https://doi.org/10.1002/jnm.70001

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