Investigation of non-volatile and photoelectric storage characteristics for MoS2/h-BN/graphene heterojunction floating-gate transistor with the different tunneling layer thicknesses
Wei Li; Tianhui Mu; Yuhua Chen; Mingjian Dai; Pengcheng Sun; Jiaying Li; Weilin Li; Zhanzi Chen; Zhuowen Wang; Ruijing Yang; Zhao Chen; Yucheng Wang; Yupan Wu; Shaoxi Wang
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Micro and Nanostructures
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.micrna.2024.207764
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Cite this source
Wei Li; Tianhui Mu; Yuhua Chen; Mingjian Dai; Pengcheng Sun; Jiaying Li; Weilin Li; Zhanzi Chen; Zhuowen Wang; Ruijing Yang; Zhao Chen; Yucheng Wang; Yupan Wu; Shaoxi Wang. Investigation of non-volatile and photoelectric storage characteristics for MoS2/h-BN/graphene heterojunction floating-gate transistor with the different tunneling layer thicknesses. Micro and Nanostructures. 2024-03. https://doi.org/10.1016/j.micrna.2024.207764