A next-generation transistor with low supply voltage operation constructed based on 2D materials' metal–semiconductor phase transition
Xingyi Tan; Hengze Qu; Jialin Yang; Shengli Zhang; Hua-Hua Fu
- Published
- Publisher
- Royal Society of Chemistry (RSC)
- Journal / collection
- Materials Horizons
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1039/d4mh00662c
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Cite this source
Xingyi Tan; Hengze Qu; Jialin Yang; Shengli Zhang; Hua-Hua Fu. A next-generation transistor with low supply voltage operation constructed based on 2D materials' metal–semiconductor phase transition. Materials Horizons. 2024. https://doi.org/10.1039/d4mh00662c