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Research literature / Conference paper

Towards Improved Nanosheet-Based Complementary Field Effect Transistor (CFET) Performance Down to 42nm Contacted Gate Pitch

T. Chiarella; P. Matagne; H. Mertens; M. Hosseini; X. Zhou; P. Eyben; H. Arimura; A. Gupta; O. Richard; C. Drijbooms; R. Caluwaerts; N. Horiguchi; J. Mitard

Published
Publisher
IEEE
Journal / collection
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/edtm58488.2024.10512269

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T. Chiarella; P. Matagne; H. Mertens; M. Hosseini; X. Zhou; P. Eyben; H. Arimura; A. Gupta; O. Richard; C. Drijbooms; R. Caluwaerts; N. Horiguchi; J. Mitard. Towards Improved Nanosheet-Based Complementary Field Effect Transistor (CFET) Performance Down to 42nm Contacted Gate Pitch. 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2024-03-03. https://doi.org/10.1109/edtm58488.2024.10512269

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