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Research literature / Conference paper

First Experimental Demonstration of Self-Aligned Flip FET (FFET): A Breakthrough Stacked Transistor Technology with 2.5T Design, Dual-Side Active and Interconnects

Haoran Lu; Yandong Ge; Xun Jiang; Jiacheng Sun; Wanyue Peng; Rui Guo; Ming Li; Yibo Lin; Runsheng Wang; Heng Wu; Ru Huang

Published
Publisher
IEEE
Journal / collection
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/vlsitechnologyandcir46783.2024.10631460

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Haoran Lu; Yandong Ge; Xun Jiang; Jiacheng Sun; Wanyue Peng; Rui Guo; Ming Li; Yibo Lin; Runsheng Wang; Heng Wu; Ru Huang. First Experimental Demonstration of Self-Aligned Flip FET (FFET): A Breakthrough Stacked Transistor Technology with 2.5T Design, Dual-Side Active and Interconnects. 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2024-06-16. https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631460

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